amplifier, power, 20w 7.5-10.5 ghz maapgm0079-die m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev a preliminary datasheet 1 1. t b = mmic base temperature 2. adjust v gg between ?2.6 and ?1.5v to achieve specified idq. parameter symbol typical units bandwidth f 7.5-10.5 ghz output power p out 42 dbm output power, 8-10 ghz p out 43 dbm 1-db compression point p1db 42 dbm small signal gain g 29 db power added efficiency pae 30 % input vswr vswr 2.5:1 output vswr vswr 2.5:1 gate c urrent i gg 50 ma drain current, under rf drive i dd 6 a output third order intercept toi 48 dbm output third order intermod, pout = 39 dbm (dcl) im3 18.5 dbc features ? 17 watt saturated output pow er level ? 20 watt saturated output pow er level over 8-10 ghz band ? variable drain voltage (8-10v) operation ? msag? process ? robust stability description the maapgm0079-die is a 3 stage 20w power amplifier with on-chip bias networks. this product is fully matched to 50 ohms on both the input and output. it can be used as a power amplifier stage or as a driver stage in high power applications. fabricated using m/a-com?s repeatable, high performance and highly reliable gaas multifunction self-aligned gate (msag)process, each device is 100% rf tested on wafer to ensure performance compliance. m/a-com?s msag process features robust silicon-like manufacturing processes, pla- nar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital fets on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. the use of refractory met- als and the absence of platinum in the gate metal formulation prevents hydrogen poi- soning when employed in hermetic packaging. electrical characteristics: t b = 40c 1 , z 0 = 50 , v dd = 10v, i dq = 4a 2 , p in = 18 dbm, r g = 20 primary applications ? satcom ? commercial avionics ? radar also available in: description ceramic package sample board (die) sample board (pkg) mechanical sample (die) part number maap- 000079-pkg001 m aap- 000079-smb004 m aap- 000079-smb001 m aap- 000079-mch000
amplifier, power, 20w 7.5-10.5 ghz maapgm0079-die m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev a preliminary datasheet 2 maximum ratings 3 operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps. 1. apply v gg = -2.7 v, v dd = 0 v. 2. ramp v dd to desired voltage, typically 10.0 v. 3. adjust v gg to set i dq , (approximately @ ?2.2 v). 4. set rf input. 5. power down sequence in reverse. turn v gg off last. characteristic symbol min typ max unit drain voltage v dd 4.0 10.0 10.0 v gate voltage v gg -2.6 -2.2 -1.5 v input power p in 18.0 21.0 dbm thermal resistance jc 2.2 c/w mmic base temperature t b note 5 c recommended operating conditions 4 parameter symbol absolute maximum units input power p in 23 dbm drain supply voltage v dd +12.0 v gate supply voltage v gg -3.0 v quiescent drain current (no rf) i dq 6.6 a junction temperature t j 170 c storage temperature t stg -55 to +150 c quiescent dc power dissipated (no rf) p diss 65.8 w 3. operation beyond these limits may result in permanent damage to the part. 4. operation outside of these ranges may reduce product reliability. 5. mmic base temperature = 170c ? jc * v dd * i dq power derating curve, quiescent (no rf) 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180 mmic base temperature (oc) peak power dissipation (w)
amplifier, power, 20w 7.5-10.5 ghz maapgm0079-die m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev a preliminary datasheet 3 all data is at 40oc mmic base temperature, cw stimulus, unless otherwise noted. figure 1. output power and power added efficiency vs. frequency at v dd = 10v and p in = 1 8 dbm 30 32 34 36 38 40 42 44 46 48 50 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequency (ghz) pout (dbm) 10 14 18 22 26 30 34 38 42 46 50 pae (%) pout pae figure 3. saturated output power and power added efficiency vs. frequency and d rain voltage 30 32 34 36 38 40 42 44 46 48 50 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequency (ghz) pout (dbm) 15 18 21 24 27 30 33 36 39 42 45 pa e (% ) po ut : vds=10 v pout : vds=8v pa e : vds=1 0v p ae : vds=8v figure 6. output power vs. input power at v dd = 10v 20 25 30 35 40 45 50 2 4 6 8 10 12 14 1 6 18 20 22 input power (dbm) output power (dbm) 7.5 ghz 8.5 ghz 9.5 ghz 10.5 ghz figure 2. 1db compression point vs. drain voltage 30 32 34 36 38 40 42 44 46 48 50 7 .0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 1 1.0 frequency (ghz) output power (dbm) vds=10v vds=8v fig 5. output power, power added efficiency, and drain current vs. junction temperature at v d =10v, f=9ghz, and p in =18dbm. 25 27 29 31 33 35 37 39 41 43 45 30 40 50 60 70 80 90 100 110 120 130 140 150 junction temperature (oc) pout (dbm), gain (db), pae (% ) 5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0 current (a) pout ss g pae ids figure 4. small signal gain and input and output vswr vs. frequency. 10 13 16 19 22 25 28 31 34 37 40 77.5 88.599.51010.511 frequency (ghz ) relative gain (db) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 vsw r gain @ 10 v input vsw r output vswr
amplifier, power, 20w 7.5-10.5 ghz maapgm0079-die m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev a preliminary datasheet 4 fig 7. power added efficiency vs. input power at v d =10v. 0 5 10 15 20 25 30 35 40 -20 24681012141618202224 input power (dbm) pa e (%) 7.5 ghz 8.5 ghz 9.5 ghz 10 .5 ghz figure 8. drain current vs. input power at v dd = 10v 0 1 2 3 4 5 6 7 8 2 4 6 8 10121416 182022 input power (dbm) ids (a) 7.5 ghz 8.5 ghz 9.5 ghz 10 .5 ghz figure 9. relative gain vs. output power by frequency at v d =8 v a nd 25% i dss 15 17 19 21 23 25 27 29 31 33 35 25 27 29 31 3 3 3 5 37 39 41 43 45 output power (dbm) relative gain (db) 7.5 ghz 9.0 ghz 10 .5 g hz figure 10. relative gain vs. output power by frequency at v d =10v and 25% idss 15 17 19 21 23 25 27 29 31 33 35 2 5 27 29 31 33 35 37 3 9 41 43 45 output power (dbm) relative gain (db) 7.5 ghz 9.0 ghz 10 .5 ghz figure 11. third order intercept vs. output power and frequency at 8v. 40 42 44 46 48 50 52 54 56 58 60 12 14 1 6 18 20 2 2 2 4 26 2 8 3 0 32 3 4 3 6 38 fundamental output power, single tone (dbm) toi (dbm) 8 ghz 9 ghz 10 ghz figure 12. third order intermod vs. output power and frequency at 8v. 0 10 20 30 40 50 60 70 80 90 10 0 12 14 1 6 1 8 20 2 2 2 4 26 2 8 3 0 32 3 4 3 6 38 fundamental output power per tone (dbm) imd3 (dbc) 8 ghz 9 ghz 10 ghz all data is at 40oc mmic base temperature, cw stimulus, unless otherwise noted.
amplifier, power, 20w 7.5-10.5 ghz maapgm0079-die m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev a preliminary datasheet 5 all data is at 40oc mmic base temperature, cw stimulus, unless otherwise noted. figure 13. third order intercept vs. output power and frequency at 10v. 40 42 44 46 48 50 52 54 56 58 60 12 14 16 18 20 22 24 26 28 30 32 34 36 38 fundamental output power, single tone (dbm) toi (dbm) 8 ghz 9 ghz 10 ghz figure 14. third order intermod vs. output power and frequency at 10v. 0 10 20 30 40 50 60 70 80 90 100 12 14 16 18 20 22 24 26 28 30 32 34 36 38 fundamental output power per tone (dbm) imd3 (dbc) 8 ghz 9 ghz 10 ghz figure 15. third order intercept vs. temperature and frequency at 10v and p out = 39 dbm dcl. 40 42 44 46 48 50 52 54 56 58 60 -30-25-20-15-10-5 0 5 10152025303540455055606570758085 mmic base temperature (oc) toi (dbm) 8 ghz 9 ghz 10 ghz figure 16. third order intermod vs. temperature and frequency at 10v and p out = 39 dbm dcl. 10 15 20 25 30 35 40 45 50 55 60 -30-25-20-15-10-5 0 5 10152025303540455055606570758085 mmic base temperature (oc) imd3 (dbc) 8 ghz 9 ghz 10 ghz figure 17. third order intercept vs. output power and %idss at 10v and 9ghz. 40 42 44 46 48 50 52 54 56 58 60 12 14 16 18 20 22 24 26 28 30 32 34 36 38 fundamental output power, single tone (dbm) toi (dbm) 10% idss 25% idss figure 18. third order intermod vs. output power and %idss at 10v and 9ghz. 0 10 20 30 40 50 60 70 80 90 100 12 14 16 18 20 22 24 26 28 30 32 34 36 38 fundamental output power per tone (dbm) imd3 (dbc) 10% idss 25% idss
amplifier, power, 20w 7.5-10.5 ghz maapgm0079-die m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev a preliminary datasheet 6 figure 11. fixture used to characterize maapgm0079-die under cw stimulus.
amplifier, power, 20w 7.5-10.5 ghz maapgm0079-die m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev a preliminary datasheet 7 pad size ( m) rf in and out 100 x 200 dc drain supply voltage v d1,2 200 x 150 dc gate supply voltage v g1,2 150 x 150 size (mils) 4 x 8 8 x 6 6 x 6 dc gate supply voltage v g3 150 x 125 6 x 5 dc drain supply voltage v d3 500 x 200 20 x 8 bond pad dimensions mechanical information chip size: 5.000 x 8.150 x 0.075 mm ( 197 x 321 x 3 mils) chip edge to bond pad dimensions are shown to the center of the bond pad. figure 12. die layout
amplifier, power, 20w 7.5-10.5 ghz maapgm0079-die m/a-com inc. and its aff iliates reserve the right to make c hanges to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitab ility of its products for any particular purpose, nor does m/a-com assume any liab ility whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.c om for additional data sheets and produc t inf or mation. rev a preliminary datasheet 8 figure 13. recommended operational configuration. wire bond as shown . assembly instructions: die attach: use ausn (80/20) 1 mil. preform solder. limit time @ 310 c to less than 7 minutes. refer to application note an3017 for more detailed information. wirebonding: bond @ 160 c using standard ball or thermal compression wedge bond techniques. for dc pad connections, use either ball or wedge bonds. for best rf performance, use wedge bonds of shortest length, although ball bonds are also acceptable. biasing note: must apply negative bias to v gg before applying positive bias to v dd to prevent damage to amplifier. die handling: refer to application note an3016. assembly and bonding diagram thermal management is critical on this part. refer to application note an3019 for applicable guidelines. note 1: all application notes may be ac- cessed by going to http://www.macom.com/ application%20notes/index.htm. note 2: in implementing the dc/ rf cross- over shown, the following rules must applied. 1. the dc crossovers should approach and cross the rf trace at a 90 degree angle; 2. the printed dc traces that approach the rf line should be stopped 2 substrate heights from the rf line edge; 3. the rated current capability of the dc crossovers should be greater than the maximum current of the device; and 4. the wires or ribbons used to make the dc crossovers should clear the rf trace by ~ 1 substrate height. 100- 200 pf 100- 200 pf 100- 20 0 pf 100- 200 pf rf out rf in 100- 200 pf 100- 200 pf 100- 200 pf 100- 200 pf v dd vdd vgg gnd rf 0.01- 0.1 f v gg 20 gnd 0.01- 0.1 f drain crossover gate crossover
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